RFMW, Ltd. announces design and sales support for a GaAs detector diode from Keysight Technologies. Available as a discrete, beam lead, the HSCH-9161 detector diode offers low junction capacitance of 0.035 pF and an fc >200 GHz making it ideal for medium-low barrier, zero bias detector circuits in 5G transceiver applications. Functional through W–band (110 GHz), the HSCH-9161 can be mounted in microstrip, finline, and coplanar circuits providing a small footprint in hybrid circuit designs. GaAs provides a lower temperature coefficient than silicon while maintaining durability. This Keysight detector diode has a maximum power handling capability of 20 dBm.